maximum ratings symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 60 v emitter-base voltage v ebo 7v collector current-continuoun i c 150 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r qja 556 o c / w p d 300 mw 2.4 mw/ o c thermal resistance, junction to ambient r q ja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c device marking 2sc1623qlt1=l5 2sc1623rlt1 =l6 2sc1623slt1=l7 electrical characteristics (t a =25 o c unless otherwise noted) symbol min typ max unit off characteristics collector cutoff current (v cb=60v) i cbo - - 0.1 ma emitter cutoff current (v be=5v) i ebo 0.1 ma characteristic total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, (2) ta=25 o c characteristic sotC 23 general purpose transistors 2 emitter 3 collector 1 base we declare that the material of product compliance with rohs requirements. 2SC1623XLT1 2012- willas electronic corp.
on characteristics dc current gain (i c =1.0ma, v ce =6v) h fe 120 - 560 collector-emitter saturation voltage (i c =100ma,i b =10ma) v ce(sat) - 0.15 0.3 v base-emitter saturation voltage (i c =100ma,i b =10ma) v be(sat) - 0.86 1.0 v i c =1ma,v ce =6.0v) v be 0.55 0.62 0.65 v small-signal characteristics h fe value s are classified as fo llowes current-gain-bandwidth product f t - 250 - mhz (v ce =6.0v,i e =1.0mhz) output capacitance(v ce = 6v, i e =0, f=1.0mhz) c ob - 3 - p f note: * q r s h fe 120~270 180~390 270~560 base -emitter on voltage device marking and ordering information device marking 3000/tape&reel shipping 3000/tape&reel 3000/tape&reel 2sc1623qlt1 l5 2sc1623rlt1 l6 2sc1623slt1 l7 2012- willas electronic corp. 2SC1623XLT1
0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 ?1.6 t a = 100c 25c ? 55c 50 20 10 50 2 1 0.5 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 t a = 25c 100 80 60 40 20 0 i c , collector current (ma) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics( ) fig.3 grounded emitter output characteristics( ) fig.4 dc current gain vs. collector current ( ) fig.5 dc current gain vs. collector current ( ) fig.6 collector-emitter saturation voltage vs. collector current v ce = 6 v v be , base to emitter voltage(v) i c , collector current (ma) v ce , collector to emitter voltage (v) 0 481 21 62 0 10 8 6 4 2 0 i c , collector current (ma) v ce , collector to emitter voltage (v) 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.2 0.5 1 2 5 10 2 0 50 100 200 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.50ma 0.2 0.5 1 2 5 10 2 0 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 2012- willas electronic corp. general purpose transistors 2SC1623XLT1
fig.8 collector-emitter saturation voltage vs. collector current ( ) v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 fig.9 gain bandwidth product vs. emitter current 500 200 100 50 f r , transition frequency(mhz) i e , emitter current (ma) ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 fig.10 collector output capacitance vs.collector-base voltage emitter inputcapacitance vs. emitter-base voltage 20 10 5 2 1 c ob , collector output capacitance( pf) c ib , emitter input capacitance (pf) v cb , collector to base voltage (v) v eb , emitter to base voltage (v) 0.2 0.5 1 2 5 10 2 0 50 fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 2 0 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 fig.11 base-collector time constant vs.emitter current 200 100 50 20 10 c c - r bb , base collector time constant( ps) i e , emitter current (ma) ?0.2 ?0.5 ?1 ?2 ?5 ?10 2012- willas electronic corp. general purpose transistors 2SC1623XLT1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. general purpose transistors 2SC1623XLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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